The Export Control (Amendment) Regulations 2025

Amendments to Category 3 - Electronics

11.—(1) The section headed Category 3 - Electronics is amended as follows.

(2) In the section headed 3A Systems, Equipment and Components—

(a)in the Note to entry 3A001.a.—

(i)for ““Film type integrated circuits”” substitute “‘Film type integrated circuits’”;

(ii)for ““Three dimensional integrated circuits”” substitute “‘Three dimensional integrated circuits’”;

(iii)after “ (“MMICs”).” insert—

(b)in entry 3A001.a.2., for “analogue-to-digital converters, integrated circuits that contain analogue-to-digital converters and store or process the digitised data, digital-to-analogue converters” substitute “Analogue-to-Digital Converters (ADCs), integrated circuits that contain ADCs and store or process the digitised data, Digital-to-Analogue Converters (DACs)”;

(c)in entry 3A001.a.5.b., for “Digital-to-Analogue Converters (DAC” substitute “DACs”;

(d)in entry 3A001.a.5.b.1., after “10 bit or more” insert “,”;

(e)in the Note to entry 3A001.a.7.—

(i)after “(CPLDs)” insert “;”;

(ii)after “ (FPGAs)” insert “;”;

(iii)after “ (FPLAs)” insert “;”;

(iv)after “ (FPICs)” insert “.”;

(f)in entry 3A001.a.10.b., for ““basic gate propagation delay time”” substitute “‘basic gate propagation delay time’”;

(g)at the end of entry 3A001.a.10., insert—

(h)in the N.B.1. to entry 3A001.a.14., for “analogue-to-digital converter integrated circuits” substitute “Analogue-to-Digital Converter (ADC) integrated circuits,”;

(i)in the N.B.2. to entry 3A001.a.14., after “devices” insert “,”;

(j)in entry 3A001.b.1.d., for “‘dual mode’.” substitute “‘dual mode’;”;

(k)in the N.B. to entry 3A001.b.2., after “ shifter” insert “,”;

(l)in Note 1 to entry 3A001.b.3., for “through” substitute “to”;

(m)in entry 3A001.b.4., for “solid state”, in both places it occurs, substitute “solid-state”;

(n)in entry 3A001.b.4.e.3., for “90 GHz; or” substitute “90 GHz.”;

(o)in the N.B.1. to entry 3A001.b.4., after “amplifiers” insert “,”;

(p)in the N.B.2. to entry 3A001.b.4., after “‘transmit modules’” insert “,”;

(q)in entry 3A001.b.7.c.2., after “GHz;”, insert “or”;

(r)in entry 3A001.b.7.c.3., omit “or”;

(s)in entry 3A001.b.11., including the Technical Note, for “synthesiser”, in both places it occurs, substitute “synthesizer”;

(t)in entry 3A001.c.1.b., after “1 GHz” omit “,”;

(u)in the Technical Notes to entry 3A001.e.1., for “Ohms” substitute “ohms”;

(v)in entry 3A001.e.3.c.—

(i)for ““overall current density”” substitute “‘overall current density’”;

(ii)at the end, insert—

(w)in Note 1 to entry 3A001.g.—

(i)after “(SCRs)” insert “;”;

(ii)after “ (ETTs)” insert “;”;

(iii)after “ (LTTs)” insert “;”;

(iv)after “ (IGCTs)” insert “;”

(v)after “(GTOs)” insert “;”;

(vi)after “(MCTs)” insert “;”;

(vii)after “Solidtrons” insert “.”;

(x)in Note 2 to entry 3A001.h.—

(i)after “ (JFETs)” insert “;”;

(ii)after “ (VJFETs)” insert “;”;

(iii)after “ (MOSFETs)” insert “;”;

(iv)for “ (DMOSFET)” substitute “(DMOSFETs);”;

(v)for “(IGBT)” substitute “(IGBTs);”;

(vi)after “ (HEMTs)” insert “;”;

(vii)after “ (BJTs)” insert “;”;

(viii)after “ (SCRs)” insert “;”;

(ix)after “ (GTOs)” insert “;”;

(x)after “ (ETOs)” insert “;”

(xi)after “PiN Diodes” insert “;”

(xii)after “Schottky Diodes” insert “.”;

(y)for entry 3A002.a.7., including the Note, substitute—

(z)in entry 3A002.h.1.d., after “14 bit or more” insert “,”.

(3) In the section headed 3B Test, Inspection and Production Equipment—

(a)in the Technical Note to entry 3B001.f.1.b., after “0,35” insert “.”;

(b)in the Note to entry 3B001.f.2—

(i)after “printing tools” insert “;”;

(ii)after “embossing tools” insert “;”;

(iii)after “lithography tools” insert “;”;

(iv)after “(S-FIL) tools” insert “.”.

(4) In the section headed 3C Materials, in entry 3C005.b., at the end insert—

(5) In the section headed 3E Technology—

(a)in entry 3E003.b., for “high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT)” substitute “High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs)”;

(b)in the Note to entry 3E003.b. —

(i)for “high electron mobility transistors (HEMT)” substitute “HEMTs”;

(ii)for “hetero junction bipolar transistors (HBT)” substitute “HBTs”.